Element- and momentum-resolved electronic structure of the dilute magnetic semiconductor manganese doped gallium arsenide

Slavomír Nemšák (), Mathias Gehlmann, Cheng-Tai Kuo, Shih-Chieh Lin, Christoph Schlueter, Ewa Mlynczak, Tien-Lin Lee, Lukasz Plucinski, Hubert Ebert, Igor Marco, Ján Minár, Claus M. Schneider and Charles S. Fadley
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Slavomír Nemšák: University of California
Mathias Gehlmann: University of California
Cheng-Tai Kuo: University of California
Shih-Chieh Lin: University of California
Christoph Schlueter: Harwell Science and Innovation Campus
Ewa Mlynczak: Forschungszentrum Jülich
Tien-Lin Lee: Harwell Science and Innovation Campus
Lukasz Plucinski: Forschungszentrum Jülich
Hubert Ebert: Ludwig Maximillian University
Igor Marco: Uppsala University
Ján Minár: University of West Bohemia
Claus M. Schneider: University of California
Charles S. Fadley: University of California

Nature Communications, 2018, vol. 9, issue 1, 1-8

Abstract: Abstract The dilute magnetic semiconductors have promise in spin-based electronics applications due to their potential for ferromagnetic order at room temperature, and various unique switching and spin-dependent conductivity properties. However, the precise mechanism by which the transition-metal doping produces ferromagnetism has been controversial. Here we have studied a dilute magnetic semiconductor (5% manganese-doped gallium arsenide) with Bragg-reflection standing-wave hard X-ray angle-resolved photoemission spectroscopy, and resolved its electronic structure into element- and momentum- resolved components. The measured valence band intensities have been projected into element-resolved components using analogous energy scans of Ga 3d, Mn 2p, and As 3d core levels, with results in excellent agreement with element-projected Bloch spectral functions and clarification of the electronic structure of this prototypical material. This technique should be broadly applicable to other multi-element materials.

Date: 2018
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DOI: 10.1038/s41467-018-05823-z

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