Nanophotonic Pockels modulators on a silicon nitride platform

Koen Alexander, John P. George, Jochem Verbist, Kristiaan Neyts, Bart Kuyken, Dries Van Thourhout () and Jeroen Beeckman ()
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Koen Alexander: Ghent University-imec
John P. George: Ghent University-imec
Jochem Verbist: Ghent University-imec
Kristiaan Neyts: Ghent University
Bart Kuyken: Ghent University-imec
Dries Van Thourhout: Ghent University-imec
Jeroen Beeckman: Ghent University

Nature Communications, 2018, vol. 9, issue 1, 1-6

Abstract: Abstract Silicon nitride (SiN) is emerging as a competitive platform for CMOS-compatible integrated photonics. However, active devices such as modulators are scarce and still lack in performance. Ideally, such a modulator should have a high bandwidth, good modulation efficiency, low loss, and cover a wide wavelength range. Here, we demonstrate the first electro-optic modulators based on ferroelectric lead zirconate titanate (PZT) films on SiN, in both the O-band and C-band. Bias-free operation, bandwidths beyond 33 GHz and data rates of 40 Gbps are shown, as well as low propagation losses (α ≈ 1 dB cm−1). A half-wave voltage-length product of 3.2 V cm is measured. Simulations indicate that further improvement is possible. This approach offers a much-anticipated route towards high-performance phase modulators on SiN.

Date: 2018
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DOI: 10.1038/s41467-018-05846-6

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