Revealing the biexciton and trion-exciton complexes in BN encapsulated WSe2
Zhipeng Li,
Tianmeng Wang,
Zhengguang Lu,
Chenhao Jin,
Yanwen Chen,
Yuze Meng,
Zhen Lian,
Takashi Taniguchi,
Kenji Watanabe,
Shengbai Zhang,
Dmitry Smirnov and
Su-Fei Shi ()
Additional contact information
Zhipeng Li: Rensselaer Polytechnic Institute
Tianmeng Wang: Rensselaer Polytechnic Institute
Zhengguang Lu: National High Magnetic Field Lab
Chenhao Jin: University of California
Yanwen Chen: Rensselaer Polytechnic Institute
Yuze Meng: Rensselaer Polytechnic Institute
Zhen Lian: Rensselaer Polytechnic Institute
Takashi Taniguchi: National Institute for Materials Science
Kenji Watanabe: National Institute for Materials Science
Shengbai Zhang: Rensselaer Polytechnic Institute
Dmitry Smirnov: National High Magnetic Field Lab
Su-Fei Shi: Rensselaer Polytechnic Institute
Nature Communications, 2018, vol. 9, issue 1, 1-7
Abstract:
Abstract Strong Coulomb interactions in single-layer transition metal dichalcogenides (TMDs) result in the emergence of strongly bound excitons, trions, and biexcitons. These excitonic complexes possess the valley degree of freedom, which can be exploited for quantum optoelectronics. However, in contrast to the good understanding of the exciton and trion properties, the binding energy of the biexciton remains elusive, with theoretical calculations and experimental studies reporting discrepant results. In this work, we resolve the conflict by employing low-temperature photoluminescence spectroscopy to identify the biexciton state in BN-encapsulated single-layer WSe2. The biexciton state only exists in charge-neutral WSe2, which is realized through the control of efficient electrostatic gating. In the lightly electron-doped WSe2, one free electron binds to a biexciton and forms the trion–exciton complex. Improved understanding of the biexciton and trion–exciton complexes paves the way for exploiting the many-body physics in TMDs for novel optoelectronics applications.
Date: 2018
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:9:y:2018:i:1:d:10.1038_s41467-018-05863-5
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DOI: 10.1038/s41467-018-05863-5
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