Realization of vertical metal semiconductor heterostructures via solution phase epitaxy

Xiaoshan Wang, Zhiwei Wang, Jindong Zhang, Xiang Wang, Zhipeng Zhang, Jialiang Wang, Zhaohua Zhu, Zhuoyao Li, Yao Liu, Xuefeng Hu, Junwen Qiu, Guohua Hu, Bo Chen, Ning Wang, Qiyuan He, Junze Chen, Jiaxu Yan, Wei Zhang, Tawfique Hasan, Shaozhou Li, Hai Li, Hua Zhang, Qiang Wang (), Xiao Huang () and Wei Huang ()
Additional contact information
Xiaoshan Wang: Nanjing Tech University (NanjingTech)
Zhiwei Wang: Nanjing Tech University (NanjingTech)
Jindong Zhang: Nanjing Tech University (NanjingTech)
Xiang Wang: Nanjing Tech University (NanjingTech)
Zhipeng Zhang: Nanjing Tech University (NanjingTech)
Jialiang Wang: Nanjing Tech University (NanjingTech)
Zhaohua Zhu: Nanjing Tech University (NanjingTech)
Zhuoyao Li: Nanjing Tech University (NanjingTech)
Yao Liu: Nanjing Tech University (NanjingTech)
Xuefeng Hu: Nanjing Tech University (NanjingTech)
Junwen Qiu: Nanjing Tech University (NanjingTech)
Guohua Hu: University of Cambridge
Bo Chen: Nanyang Technological University
Ning Wang: Nanjing Tech University (NanjingTech)
Qiyuan He: Nanyang Technological University
Junze Chen: Nanyang Technological University
Jiaxu Yan: Nanjing Tech University (NanjingTech)
Wei Zhang: Nanjing Tech University (NanjingTech)
Tawfique Hasan: University of Cambridge
Shaozhou Li: Nanjing University of Posts & Telecommunications
Hai Li: Nanjing Tech University (NanjingTech)
Hua Zhang: Nanyang Technological University
Qiang Wang: Nanjing Tech University (NanjingTech)
Xiao Huang: Nanjing Tech University (NanjingTech)
Wei Huang: Nanjing Tech University (NanjingTech)

Nature Communications, 2018, vol. 9, issue 1, 1-11

Abstract: Abstract The creation of crystal phase heterostructures of transition metal chalcogenides, e.g., the 1T/2H heterostructures, has led to the formation of metal/semiconductor junctions with low potential barriers. Very differently, post-transition metal chalcogenides are semiconductors regardless of their phases. Herein, we report, based on experimental and simulation results, that alloying between 1T-SnS2 and 1T-WS2 induces a charge redistribution in Sn and W to realize metallic Sn0.5W0.5S2 nanosheets. These nanosheets are epitaxially deposited on surfaces of semiconducting SnS2 nanoplates to form vertical heterostructures. The ohmic-like contact formed at the Sn0.5W0.5S2/SnS2 heterointerface affords rapid transport of charge carriers, and allows for the fabrication of fast photodetectors. Such facile charge transfer, combined with a high surface affinity for acetone molecules, further enables their use as highly selective 100 ppb level acetone sensors. Our work suggests that combining compositional and structural control in solution-phase epitaxy holds promises for solution-processible thin-film optoelectronics and sensors.

Date: 2018
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DOI: 10.1038/s41467-018-06053-z

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