All carbon materials pn diode

Xiaojing Feng, Xing Zhao, Liu Yang, Mengyao Li, Fengxiang Qie, Jiahui Guo, Yuchun Zhang, Tiehu Li, Wenxia Yuan and Yong Yan ()
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Xiaojing Feng: CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology
Xing Zhao: CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology
Liu Yang: CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology
Mengyao Li: CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology
Fengxiang Qie: CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology
Jiahui Guo: CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology
Yuchun Zhang: CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology
Tiehu Li: Northwestern Polytechnical University
Wenxia Yuan: University of Science and Technology Beijing
Yong Yan: CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology

Nature Communications, 2018, vol. 9, issue 1, 1-7

Abstract: Abstract Semiconductor pn junctions are elementary building blocks of many electronic devices such as transistors, solar cells, photodetectors, and integrated circuits. Due to the absence of an energy bandgap and massless Dirac-like behaviour of charge carriers, graphene pn junction with electrical current rectification characteristics is hardly achieved. Here we show a graphene pn junction diode can be made exclusively from carbon materials by laminating two layers of positively and negatively charged graphene oxides. As the interdiffusion of oppositely charged mobile counterions, a built-in potential is created to rectify the current by changing the tunnelling probability of electrons across the junction. This graphene diode is semi-transparent, can perform simple logic operations, and since it has carbon nanotubes electrodes, we demonstrate an all carbon materials pn diode. We expect this graphene diode will expand material choices and provide functionalities (e.g. grafting recognition units on graphene oxides) beyond that of traditional semiconductor pn junctions.

Date: 2018
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DOI: 10.1038/s41467-018-06150-z

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