An orbitally derived single-atom magnetic memory

Brian Kiraly, Alexander N. Rudenko, Werner M. J. Weerdenburg, Daniel Wegner, Mikhail I. Katsnelson and Alexander A. Khajetoorians ()
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Brian Kiraly: Radboud University
Alexander N. Rudenko: Radboud University
Werner M. J. Weerdenburg: Radboud University
Daniel Wegner: Radboud University
Mikhail I. Katsnelson: Radboud University
Alexander A. Khajetoorians: Radboud University

Nature Communications, 2018, vol. 9, issue 1, 1-8

Abstract: Abstract A magnetic atom epitomizes the scaling limit for magnetic information storage. Individual atomic spins have recently exhibited magnetic remanence, a requirement for magnetic memory. However, such memory has been only realized on thin insulating surfaces, removing potential tunability via electronic gating or exchange-driven magnetic coupling. Here, we show a previously unobserved mechanism for single-atom magnetic storage based on bistability in the orbital population, or so-called valency, of an individual Co atom on semiconducting black phosphorus (BP). Ab initio calculations reveal that distance-dependent screening from the BP surface stabilizes the two distinct valencies, each with a unique orbital population, total magnetic moment, and spatial charge density. Excellent correspondence between the measured and predicted charge densities reveal that such orbital configurations can be accessed and manipulated without a spin-sensitive readout mechanism. This orbital memory derives stability from the energetic barrier to atomic relaxation, demonstrating the potential for high-temperature single-atom information storage.

Date: 2018
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DOI: 10.1038/s41467-018-06337-4

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