Carrier density and disorder tuned superconductor-metal transition in a two-dimensional electron system

Zhuoyu Chen (), Adrian G. Swartz, Hyeok Yoon, Hisashi Inoue, Tyler A. Merz, Di Lu, Yanwu Xie, Hongtao Yuan, Yasuyuki Hikita, Srinivas Raghu and Harold Y. Hwang ()
Additional contact information
Zhuoyu Chen: Stanford University
Adrian G. Swartz: Stanford University
Hyeok Yoon: Stanford University
Hisashi Inoue: Stanford University
Tyler A. Merz: Stanford University
Di Lu: Stanford University
Yanwu Xie: Stanford University
Hongtao Yuan: Stanford University
Yasuyuki Hikita: Stanford University
Srinivas Raghu: Stanford University
Harold Y. Hwang: Stanford University

Nature Communications, 2018, vol. 9, issue 1, 1-6

Abstract: Abstract Quantum ground states that arise at atomically controlled oxide interfaces provide an opportunity to address key questions in condensed matter physics, including the nature of two-dimensional metallic behaviour often observed adjacent to superconductivity. At the superconducting LaAlO3/SrTiO3 interface, a metallic ground state emerges upon the collapse of superconductivity with field-effect gating and is accompanied with a pseudogap. Here we utilize independent control of carrier density and disorder of the interfacial superconductor using dual electrostatic gates, which enables the comprehensive examination of the electronic phase diagram approaching zero temperature. We find that the pseudogap corresponds to precursor pairing, and the onset of long-range phase coherence forms a two-dimensional superconducting dome as a function of the dual-gate voltages. The gate-tuned superconductor–metal transitions are driven by macroscopic phase fluctuations of Josephson coupled superconducting puddles.

Date: 2018
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DOI: 10.1038/s41467-018-06444-2

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