Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures

Jangyup Son, Junyoung Kwon, SunPhil Kim, Yinchuan Lv, Jaehyung Yu, Jong-Young Lee, Huije Ryu, Kenji Watanabe, Takashi Taniguchi, Rita Garrido-Menacho, Nadya Mason, Elif Ertekin, Pinshane Y. Huang, Gwan-Hyoung Lee () and Arend van der Zande ()
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Jangyup Son: University of Illinois at Urbana-Champaign
Junyoung Kwon: Yonsei University
SunPhil Kim: University of Illinois at Urbana-Champaign
Yinchuan Lv: University of Illinois at Urbana-Champaign
Jaehyung Yu: University of Illinois at Urbana-Champaign
Jong-Young Lee: Yonsei University
Huije Ryu: Yonsei University
Kenji Watanabe: National Institute for Materials Science
Takashi Taniguchi: National Institute for Materials Science
Rita Garrido-Menacho: University of Illinois at Urbana-Champaign
Nadya Mason: University of Illinois at Urbana-Champaign
Elif Ertekin: University of Illinois at Urbana-Champaign
Pinshane Y. Huang: University of Illinois at Urbana-Champaign
Gwan-Hyoung Lee: Yonsei University
Arend van der Zande: University of Illinois at Urbana-Champaign

Nature Communications, 2018, vol. 9, issue 1, 1-9

Abstract: Abstract Atomically precise fabrication methods are critical for the development of next-generation technologies. For example, in nanoelectronics based on van der Waals heterostructures, where two-dimensional materials are stacked to form devices with nanometer thicknesses, a major challenge is patterning with atomic precision and individually addressing each molecular layer. Here we demonstrate an atomically thin graphene etch stop for patterning van der Waals heterostructures through the selective etch of two-dimensional materials with xenon difluoride gas. Graphene etch stops enable one-step patterning of sophisticated devices from heterostructures by accessing buried layers and forming one-dimensional contacts. Graphene transistors with fluorinated graphene contacts show a room temperature mobility of 40,000 cm2 V−1 s−1 at carrier density of 4 × 1012 cm−2 and contact resistivity of 80 Ω·μm. We demonstrate the versatility of graphene etch stops with three-dimensionally integrated nanoelectronics with multiple active layers and nanoelectromechanical devices with performance comparable to the state-of-the-art.

Date: 2018
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:9:y:2018:i:1:d:10.1038_s41467-018-06524-3

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DOI: 10.1038/s41467-018-06524-3

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