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Twist angle-dependent conductivities across MoS2/graphene heterojunctions

Mengzhou Liao, Ze-Wen Wu, Luojun Du, Tingting Zhang, Zheng Wei, Jianqi Zhu, Hua Yu, Jian Tang, Lin Gu, Yanxia Xing, Rong Yang, Dongxia Shi, Yugui Yao () and Guangyu Zhang ()
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Mengzhou Liao: Chinese Academy of Sciences
Ze-Wen Wu: Beijing Institute of Technology
Luojun Du: Chinese Academy of Sciences
Tingting Zhang: Chinese Academy of Sciences
Zheng Wei: Chinese Academy of Sciences
Jianqi Zhu: Chinese Academy of Sciences
Hua Yu: Chinese Academy of Sciences
Jian Tang: Chinese Academy of Sciences
Lin Gu: Chinese Academy of Sciences
Yanxia Xing: Beijing Institute of Technology
Rong Yang: Chinese Academy of Sciences
Dongxia Shi: Chinese Academy of Sciences
Yugui Yao: Beijing Institute of Technology
Guangyu Zhang: Chinese Academy of Sciences

Nature Communications, 2018, vol. 9, issue 1, 1-6

Abstract: Abstract Van der Waals heterostructures stacked from different two-dimensional materials offer a unique platform for addressing many fundamental physics and construction of advanced devices. Twist angle between the two individual layers plays a crucial role in tuning the heterostructure properties. Here we report the experimental investigation of the twist angle-dependent conductivities in MoS2/graphene van der Waals heterojunctions. We found that the vertical conductivity of the heterojunction can be tuned by ∼5 times under different twist configurations, and the highest/lowest conductivity occurs at a twist angle of 0°/30°. Density functional theory simulations suggest that this conductivity change originates from the transmission coefficient difference in the heterojunctions with different twist angles. Our work provides a guidance in using the MoS2/graphene heterojunction for electronics, especially on reducing the contact resistance in MoS2 devices as well as other TMDCs devices contacted by graphene.

Date: 2018
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DOI: 10.1038/s41467-018-06555-w

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