Low threshold and efficient multiple exciton generation in halide perovskite nanocrystals
Mingjie Li,
Raihana Begum,
Jianhui Fu,
Qiang Xu,
Teck Ming Koh,
Sjoerd A. Veldhuis,
Michael Grätzel,
Nripan Mathews,
Subodh Mhaisalkar () and
Tze Chien Sum ()
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Mingjie Li: Nanyang Technological University
Raihana Begum: Energy Research Institute @ NTU (ERI@N)
Jianhui Fu: Nanyang Technological University
Qiang Xu: Nanyang Technological University
Teck Ming Koh: Energy Research Institute @ NTU (ERI@N)
Sjoerd A. Veldhuis: Energy Research Institute @ NTU (ERI@N)
Michael Grätzel: Swiss Federal Institute of Technology
Nripan Mathews: Energy Research Institute @ NTU (ERI@N)
Subodh Mhaisalkar: Energy Research Institute @ NTU (ERI@N)
Tze Chien Sum: Nanyang Technological University
Nature Communications, 2018, vol. 9, issue 1, 1-7
Abstract:
Abstract Multiple exciton generation (MEG) or carrier multiplication, a process that spawns two or more electron–hole pairs from an absorbed high-energy photon (larger than two times bandgap energy Eg), is a promising way to augment the photocurrent and overcome the Shockley–Queisser limit. Conventional semiconductor nanocrystals, the forerunners, face severe challenges from fast hot-carrier cooling. Perovskite nanocrystals possess an intrinsic phonon bottleneck that prolongs slow hot-carrier cooling, transcending these limitations. Herein, we demonstrate enhanced MEG with 2.25Eg threshold and 75% slope efficiency in intermediate-confined colloidal formamidinium lead iodide nanocrystals, surpassing those in strongly confined lead sulfide or lead selenide incumbents. Efficient MEG occurs via inverse Auger process within 90 fs, afforded by the slow cooling of energetic hot carriers. These nanocrystals circumvent the conundrum over enhanced Coulombic coupling and reduced density of states in strongly confined nanocrystals. These insights may lead to the realization of next generation of solar cells and efficient optoelectronic devices.
Date: 2018
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natcom:v:9:y:2018:i:1:d:10.1038_s41467-018-06596-1
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DOI: 10.1038/s41467-018-06596-1
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