Graphene-enabled and directed nanomaterial placement from solution for large-scale device integration

Michael Engel, Damon B. Farmer, Jaione Tirapu Azpiroz, Jung-Woo T. Seo, Joohoon Kang, Phaedon Avouris, Mark C. Hersam, Ralph Krupke and Mathias Steiner ()
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Michael Engel: IBM Research
Damon B. Farmer: IBM Research
Jaione Tirapu Azpiroz: IBM Research
Jung-Woo T. Seo: Northwestern University
Joohoon Kang: Northwestern University
Phaedon Avouris: IBM Research
Mark C. Hersam: Northwestern University
Ralph Krupke: Karlsruhe Institute of Technology
Mathias Steiner: IBM Research

Nature Communications, 2018, vol. 9, issue 1, 1-7

Abstract: Abstract Directed placement of solution-based nanomaterials at predefined locations with nanoscale precision limits bottom-up integration in semiconductor process technology. We report a method for electric-field-assisted placement of nanomaterials from solution by means of large-scale graphene layers featuring nanoscale deposition sites. The structured graphene layers are prepared via either transfer or synthesis on standard substrates, and then are removed once nanomaterial deposition is completed, yielding material assemblies with nanoscale resolution that cover surface areas >1 mm2. In order to demonstrate the broad applicability, we have assembled representative zero-dimensional, one-dimensional, and two-dimensional semiconductors at predefined substrate locations and integrated them into nanoelectronic devices. Ultimately, this method opens a route to bottom-up integration of nanomaterials for industry-scale applications.

Date: 2018
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DOI: 10.1038/s41467-018-06604-4

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