Electron aspirator using electron–electron scattering in nanoscale silicon

Himma Firdaus, Tokinobu Watanabe, Masahiro Hori, Daniel Moraru, Yasuo Takahashi, Akira Fujiwara and Yukinori Ono ()
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Himma Firdaus: Shizuoka University
Tokinobu Watanabe: Shizuoka University
Masahiro Hori: Shizuoka University
Daniel Moraru: Shizuoka University
Yasuo Takahashi: Hokkaido University
Akira Fujiwara: NTT Basic Research Laboratories
Yukinori Ono: Shizuoka University

Nature Communications, 2018, vol. 9, issue 1, 1-8

Abstract: Abstract Current enhancement without increasing the input power is a critical issue to be pursued for electronic circuits. However, drivability of metal-oxide-semiconductor (MOS) transistors is limited by the source-injection current, and electrons that have passed through the source unavoidably waste their momentum to the phonon bath. Here, we propose the Si electron-aspirator, a nanometer-scaled MOS device with a T-shaped branch, to go beyond this limit. The device utilizes the hydrodynamic nature of electrons due to the electron–electron scattering, by which the injected hot electrons transfer their momentum to cold electrons before they relax with the phonon bath. This momentum transfer induces an electron flow from the grounded side terminal without additional power sources. The operation is demonstrated by observing the output-current enhancement by a factor of about 3 at 8 K, which reveals that the electron–electron scattering can govern the electron transport in nanometer-scaled MOS devices, and increase their effective drivability.

Date: 2018
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DOI: 10.1038/s41467-018-07278-8

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