A simple and robust approach to reducing contact resistance in organic transistors

Zachary A. Lamport, Katrina J. Barth, Hyunsu Lee, Eliot Gann, Sebastian Engmann, Hu Chen, Martin Guthold, Iain McCulloch, John E. Anthony, Lee J. Richter, Dean M. DeLongchamp and Oana D. Jurchescu ()
Additional contact information
Zachary A. Lamport: Wake Forest University
Katrina J. Barth: Wake Forest University
Hyunsu Lee: Wake Forest University
Eliot Gann: Materials Science and Engineering Division, National Institute of Standards and Technology
Sebastian Engmann: Materials Science and Engineering Division, National Institute of Standards and Technology
Hu Chen: King Abdullah University of Science and Technology (KAUST)
Martin Guthold: Wake Forest University
Iain McCulloch: King Abdullah University of Science and Technology (KAUST)
John E. Anthony: University of Kentucky
Lee J. Richter: Materials Science and Engineering Division, National Institute of Standards and Technology
Dean M. DeLongchamp: Materials Science and Engineering Division, National Institute of Standards and Technology
Oana D. Jurchescu: Wake Forest University

Nature Communications, 2018, vol. 9, issue 1, 1-8

Abstract: Abstract Efficient injection of charge carriers from the contacts into the semiconductor layer is crucial for achieving high-performance organic devices. The potential drop necessary to accomplish this process yields a resistance associated with the contacts, namely the contact resistance. A large contact resistance can limit the operation of devices and even lead to inaccuracies in the extraction of the device parameters. Here, we demonstrate a simple and efficient strategy for reducing the contact resistance in organic thin-film transistors by more than an order of magnitude by creating high work function domains at the surface of the injecting electrodes to promote channels of enhanced injection. We find that the method is effective for both organic small molecule and polymer semiconductors, where we achieved a contact resistance as low as 200 Ωcm and device charge carrier mobilities as high as 20 cm2V−1s−1, independent of the applied gate voltage.

Date: 2018
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DOI: 10.1038/s41467-018-07388-3

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