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Plasmon induced thermoelectric effect in graphene

Viktoryia Shautsova (), Themistoklis Sidiropoulos, Xiaofei Xiao, Nicholas A. Güsken, Nicola C. G. Black, Adam M. Gilbertson, Vincenzo Giannini, Stefan A. Maier, Lesley F. Cohen and Rupert F. Oulton
Additional contact information
Viktoryia Shautsova: Imperial College
Themistoklis Sidiropoulos: Imperial College
Xiaofei Xiao: Imperial College
Nicholas A. Güsken: Imperial College
Nicola C. G. Black: Imperial College
Adam M. Gilbertson: Imperial College
Vincenzo Giannini: Imperial College
Stefan A. Maier: Imperial College
Lesley F. Cohen: Imperial College
Rupert F. Oulton: Imperial College

Nature Communications, 2018, vol. 9, issue 1, 1-9

Abstract: Abstract Graphene has emerged as a promising material for optoelectronics due to its potential for ultrafast and broad-band photodetection. The photoresponse of graphene junctions is characterized by two competing photocurrent generation mechanisms: a conventional photovoltaic effect and a more dominant hot-carrier-assisted photothermoelectric (PTE) effect. The PTE effect is understood to rely on variations in the Seebeck coefficient through the graphene doping profile. A second PTE effect can occur across a homogeneous graphene channel in the presence of an electronic temperature gradient. Here, we study the latter effect facilitated by strongly localised plasmonic heating of graphene carriers in the presence of nanostructured electrical contacts resulting in electronic temperatures of the order of 2000 K. At certain conditions, the plasmon-induced PTE photocurrent contribution can be isolated. In this regime, the device effectively operates as a sensitive electronic thermometer and as such represents an enabling technology for development of hot carrier based plasmonic devices.

Date: 2018
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DOI: 10.1038/s41467-018-07508-z

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