Seamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectors

Gang Wang, Miao Zhang, Da Chen, Qinglei Guo, Xuefei Feng, Tianchao Niu, Xiaosong Liu, Ang Li, Jiawei Lai, Dong Sun, Zhimin Liao, Yongqiang Wang, Paul K. Chu, Guqiao Ding, Xiaoming Xie, Zengfeng Di () and Xi Wang
Additional contact information
Gang Wang: Chinese Academy of Sciences
Miao Zhang: Chinese Academy of Sciences
Da Chen: Chinese Academy of Sciences
Qinglei Guo: Chinese Academy of Sciences
Xuefei Feng: Chinese Academy of Sciences
Tianchao Niu: Chinese Academy of Sciences
Xiaosong Liu: Chinese Academy of Sciences
Ang Li: Chinese Academy of Sciences
Jiawei Lai: Peking University
Dong Sun: Peking University
Zhimin Liao: Peking University
Yongqiang Wang: Los Alamos National Laboratory
Paul K. Chu: City University of Hong Kong
Guqiao Ding: Chinese Academy of Sciences
Xiaoming Xie: Chinese Academy of Sciences
Zengfeng Di: Chinese Academy of Sciences
Xi Wang: Chinese Academy of Sciences

Nature Communications, 2018, vol. 9, issue 1, 1-9

Abstract: Abstract Lateral graphene p–n junctions are important since they constitute the core components in a variety of electronic/photonic systems. However, formation of lateral graphene p–n junctions with a controllable doping levels is still a great challenge due to the monolayer feature of graphene. Herein, by performing selective ion implantation and in situ growth by dynamic chemical vapor deposition, direct formation of seamless lateral graphene p–n junctions with spatial control and tunable doping is demonstrated. Uniform lattice substitution with heteroatoms is achieved in both the boron-doped and nitrogen-doped regions and photoelectrical assessment reveals that the seamless lateral p–n junctions exhibit a distinct photocurrent response under ambient conditions. As ion implantation is a standard technique in microelectronics, our study suggests a simple and effective strategy for mass production of graphene p–n junctions with batch capability and spatial controllability, which can be readily integrated into the production of graphene-based electronics and photonics.

Date: 2018
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DOI: 10.1038/s41467-018-07555-6

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