Single crystal hybrid perovskite field-effect transistors

Weili Yu, Feng Li, Liyang Yu, Muhammad R. Niazi, Yuting Zou, Daniel Corzo, Aniruddha Basu, Chun Ma, Sukumar Dey, Max L. Tietze, Ulrich Buttner, Xianbin Wang, Zhihong Wang, Mohamed N. Hedhili, Chunlei Guo, Tom Wu and Aram Amassian ()
Additional contact information
Weili Yu: King Abdullah University of Science and Technology (KAUST)
Feng Li: King Abdullah University of Science and Technology (KAUST)
Liyang Yu: King Abdullah University of Science and Technology (KAUST)
Muhammad R. Niazi: King Abdullah University of Science and Technology (KAUST)
Yuting Zou: Chinese Academy of Sciences (CAS)
Daniel Corzo: King Abdullah University of Science and Technology (KAUST)
Aniruddha Basu: King Abdullah University of Science and Technology (KAUST)
Chun Ma: King Abdullah University of Science and Technology (KAUST)
Sukumar Dey: King Abdullah University of Science and Technology (KAUST)
Max L. Tietze: King Abdullah University of Science and Technology (KAUST)
Ulrich Buttner: King Abdullah University of Science and Technology (KAUST)
Xianbin Wang: King Abdullah University of Science and Technology (KAUST)
Zhihong Wang: King Abdullah University of Science and Technology (KAUST)
Mohamed N. Hedhili: King Abdullah University of Science and Technology (KAUST)
Chunlei Guo: Chinese Academy of Sciences (CAS)
Tom Wu: King Abdullah University of Science and Technology (KAUST)
Aram Amassian: King Abdullah University of Science and Technology (KAUST)

Nature Communications, 2018, vol. 9, issue 1, 1-10

Abstract: Abstract The fields of photovoltaics, photodetection and light emission have seen tremendous activity in recent years with the advent of hybrid organic-inorganic perovskites. Yet, there have been far fewer reports of perovskite-based field-effect transistors. The lateral and interfacial transport requirements of transistors make them particularly vulnerable to surface contamination and defects rife in polycrystalline films and bulk single crystals. Here, we demonstrate a spatially-confined inverse temperature crystallization strategy which synthesizes micrometre-thin single crystals of methylammonium lead halide perovskites MAPbX3 (X = Cl, Br, I) with sub-nanometer surface roughness and very low surface contamination. These benefit the integration of MAPbX3 crystals into ambipolar transistors and yield record, room-temperature field-effect mobility up to 4.7 and 1.5 cm2 V−1 s−1 in p and n channel devices respectively, with 104 to 105 on-off ratio and low turn-on voltages. This work paves the way for integrating hybrid perovskite crystals into printed, flexible and transparent electronics.

Date: 2018
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DOI: 10.1038/s41467-018-07706-9

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