Ultimate limit in size and performance of WSe2 vertical diodes

Ghazanfar Nazir, Hakseong Kim, Jihwan Kim, Kyoung Soo Kim, Dong Hoon Shin, Muhammad Farooq Khan, Dong Su Lee, Jun Yeon Hwang, Chanyong Hwang, Junho Suh, Jonghwa Eom and Suyong Jung ()
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Ghazanfar Nazir: Korea Research Institute of Standards and Science
Hakseong Kim: Korea Research Institute of Standards and Science
Jihwan Kim: Korea Research Institute of Standards and Science
Kyoung Soo Kim: Korea Institute of Science and Technology
Dong Hoon Shin: Ewha Womans University
Muhammad Farooq Khan: Korea Research Institute of Standards and Science
Dong Su Lee: Korea Institute of Science and Technology
Jun Yeon Hwang: Korea Institute of Science and Technology
Chanyong Hwang: Korea Research Institute of Standards and Science
Junho Suh: Korea Research Institute of Standards and Science
Jonghwa Eom: Sejong University
Suyong Jung: Korea Research Institute of Standards and Science

Nature Communications, 2018, vol. 9, issue 1, 1-9

Abstract: Abstract Precise doping-profile engineering in van der Waals heterostructures is a key element to promote optimal device performance in various electrical and optical applications with two-dimensional layered materials. Here, we report tungsten diselenide- (WSe2) based pure vertical diodes with atomically defined p-, i- and n-channel regions. Externally modulated p- and n-doped layers are respectively formed on the bottom and the top facets of WSe2 single crystals by direct evaporations of high and low work-function metals platinum and gadolinium, thus forming atomically sharp p–i–n heterojunctions in the homogeneous WSe2 layers. As the number of layers increases, charge transport through the vertical WSe2 p–i–n heterojunctions is characterized by a series of quantum tunneling events; direct tunneling, Fowler–Nordheim tunneling, and Schottky emission tunneling. With optimally selected WSe2 thickness, our vertical heterojunctions show superb diode characteristics of an unprecedentedly high current density and low turn-on voltages while maintaining good current rectification.

Date: 2018
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DOI: 10.1038/s41467-018-07820-8

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