Enhanced stability and efficiency in hole-transport-layer-free CsSnI3 perovskite photovoltaics

K. P. Marshall, M. Walker, R. I. Walton and R. A. Hatton ()
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K. P. Marshall: University of Warwick
M. Walker: University of Warwick
R. I. Walton: University of Warwick
R. A. Hatton: University of Warwick

Nature Energy, 2016, vol. 1, issue 12, 1-9

Abstract: Abstract Photovoltaics based on tin halide perovskites have not yet benefited from the same intensive research effort that has propelled lead perovskite photovoltaics to >20% power conversion efficiency, due to the susceptibility of tin perovskites to oxidation, the low energy of defect formation and the difficultly in forming pinhole-free films. Here we report CsSnI3 perovskite photovoltaic devices without a hole-selective interfacial layer that exhibit a stability ∼10 times greater than devices with the same architecture using methylammonium lead iodide perovskite, and the highest efficiency to date for a CsSnI3 photovoltaic: 3.56%. The latter largely results from a high device fill factor, achieved using a strategy that removes the need for an electron-blocking layer or an additional processing step to minimize the pinhole density in the perovskite film, based on co-depositing the perovskite precursors with SnCl2. These two findings raise the prospect that this class of lead-free perovskite photovoltaic may yet prove viable for applications.

Date: 2016
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DOI: 10.1038/nenergy.2016.178

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