High-efficiency inverted semi-transparent planar perovskite solar cells in substrate configuration

Fan Fu (), Thomas Feurer, Thomas Paul Weiss, Stefano Pisoni, Enrico Avancini, Christian Andres, Stephan Buecheler () and Ayodhya N. Tiwari
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Fan Fu: Laboratory for Thin Films and Photovoltaics, Empa—Swiss Federal Laboratories for Materials Science and Technology
Thomas Feurer: Laboratory for Thin Films and Photovoltaics, Empa—Swiss Federal Laboratories for Materials Science and Technology
Thomas Paul Weiss: Laboratory for Thin Films and Photovoltaics, Empa—Swiss Federal Laboratories for Materials Science and Technology
Stefano Pisoni: Laboratory for Thin Films and Photovoltaics, Empa—Swiss Federal Laboratories for Materials Science and Technology
Enrico Avancini: Laboratory for Thin Films and Photovoltaics, Empa—Swiss Federal Laboratories for Materials Science and Technology
Christian Andres: Laboratory for Thin Films and Photovoltaics, Empa—Swiss Federal Laboratories for Materials Science and Technology
Stephan Buecheler: Laboratory for Thin Films and Photovoltaics, Empa—Swiss Federal Laboratories for Materials Science and Technology
Ayodhya N. Tiwari: Laboratory for Thin Films and Photovoltaics, Empa—Swiss Federal Laboratories for Materials Science and Technology

Nature Energy, 2017, vol. 2, issue 1, 1-9

Abstract: Abstract The ability to grow perovskite solar cells in substrate configuration, where light enters the devices from the film side, allows the use of non-transparent flexible polymer and metal substrates. Furthermore, this configuration could facilitate processing directly on Cu(In,Ga)Se2 solar cells to realize ultrahigh-efficiency polycrystalline all-thin-film tandem devices. However, the inversion of conventional superstrate architecture imposes severe constraints on device processing and limits the electronic quality of the absorber and charge selective contacts. Here we report a device architecture that allows inverted semi-transparent planar perovskite solar cells with a high open-circuit voltage of 1.116 V and substantially improved efficiency of 16.1%. The substrate configuration perovskite devices show a temperature coefficient of −0.18% °C−1 and promising thermal and photo-stability. Importantly, the device exhibits a high average transmittance of 80.4% between 800 and 1,200 nm, which allows us to demonstrate polycrystalline all-thin-film tandem devices with efficiencies of 22.1% and 20.9% for Cu(In,Ga)Se2 and CuInSe2 bottom cells, respectively.

Date: 2017
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DOI: 10.1038/nenergy.2016.190

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