Enhanced photoelectrochemical efficiency and stability using a conformal TiO2 film on a black silicon photoanode

Yanhao Yu, Zheng Zhang, Xin Yin, Alexander Kvit, Qingliang Liao, Zhuo Kang, Xiaoqin Yan, Yue Zhang () and Xudong Wang ()
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Yanhao Yu: University of Wisconsin-Madison
Zheng Zhang: School of Materials Science and Engineering, University of Science and Technology Beijing
Xin Yin: University of Wisconsin-Madison
Alexander Kvit: Materials Science Center, University of Wisconsin-Madison
Qingliang Liao: School of Materials Science and Engineering, University of Science and Technology Beijing
Zhuo Kang: School of Materials Science and Engineering, University of Science and Technology Beijing
Xiaoqin Yan: School of Materials Science and Engineering, University of Science and Technology Beijing
Yue Zhang: School of Materials Science and Engineering, University of Science and Technology Beijing
Xudong Wang: University of Wisconsin-Madison

Nature Energy, 2017, vol. 2, issue 6, 1-7

Abstract: Abstract Black silicon (b-Si) is a surface-nanostructured Si with extremely efficient light absorption capability and is therefore of interest for solar energy conversion. However, intense charge recombination and low electrochemical stability limit the use of b-Si in photoelectrochemical solar-fuel production. Here we report that a conformal, ultrathin, amorphous TiO2 film deposited by low-temperature atomic layer deposition (ALD) on top of b-Si can simultaneously address both of these issues. Combined with a Co(OH)2 thin film as the oxygen evolution catalyst, this b-Si/TiO2/Co(OH)2 heterostructured photoanode was able to produce a saturated photocurrent density of 32.3 mA cm−2 at an external potential of 1.48 V versus reversible reference electrode (RHE) in 1 M NaOH electrolyte. The enhanced photocurrent relative to planar Si and unprotected b-Si photoelectrodes was attributed to the enhanced charge separation efficiency as a result of the effective passivation of defective sites on the b-Si surface. The 8-nm ALD TiO2 layer extends the operational lifetime of b-Si from less than half an hour to four hours.

Date: 2017
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DOI: 10.1038/nenergy.2017.45

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