Visualization and suppression of interfacial recombination for high-efficiency large-area pin perovskite solar cells

Martin Stolterfoht (), Christian M. Wolff, José A. Márquez, Shanshan Zhang, Charles J. Hages, Daniel Rothhardt, Steve Albrecht, Paul L. Burn, Paul Meredith, Thomas Unold () and Dieter Neher ()
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Martin Stolterfoht: University of Potsdam
Christian M. Wolff: University of Potsdam
José A. Márquez: Helmholtz-Zentrum-Berlin
Shanshan Zhang: University of Potsdam
Charles J. Hages: Helmholtz-Zentrum-Berlin
Daniel Rothhardt: University of Potsdam
Steve Albrecht: Young Investigator Group Perovskite Tandem Solar Cells, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH
Paul L. Burn: The University of Queensland
Paul Meredith: Swansea University
Thomas Unold: Helmholtz-Zentrum-Berlin
Dieter Neher: University of Potsdam

Nature Energy, 2018, vol. 3, issue 10, 847-854

Abstract: Abstract The performance of perovskite solar cells is predominantly limited by non-radiative recombination, either through trap-assisted recombination in the absorber layer or via minority carrier recombination at the perovskite/transport layer interfaces. Here, we use transient and absolute photoluminescence imaging to visualize all non-radiative recombination pathways in planar pin-type perovskite solar cells with undoped organic charge transport layers. We find significant quasi-Fermi-level splitting losses (135 meV) in the perovskite bulk, whereas interfacial recombination results in an additional free energy loss of 80 meV at each individual interface, which limits the open-circuit voltage (VOC) of the complete cell to ~1.12 V. Inserting ultrathin interlayers between the perovskite and transport layers leads to a substantial reduction of these interfacial losses at both the p and n contacts. Using this knowledge and approach, we demonstrate reproducible dopant-free 1 cm2 perovskite solar cells surpassing 20% efficiency (19.83% certified) with stabilized power output, a high VOC (1.17 V) and record fill factor (>81%).

Date: 2018
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DOI: 10.1038/s41560-018-0219-8

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