Passivating contacts for crystalline silicon solar cells

Thomas G. Allen, James Bullock, Xinbo Yang, Ali Javey and Stefaan De Wolf ()
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Thomas G. Allen: King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC)
James Bullock: University of Melbourne
Xinbo Yang: King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC)
Ali Javey: University of California
Stefaan De Wolf: King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC)

Nature Energy, 2019, vol. 4, issue 11, 914-928

Abstract: Abstract The global photovoltaic (PV) market is dominated by crystalline silicon (c-Si) based technologies with heavily doped, directly metallized contacts. Recombination of photo-generated electrons and holes at the contact regions is increasingly constraining the power conversion efficiencies of these devices as other performance-limiting energy losses are overcome. To move forward, c-Si PV technologies must implement alternative contacting approaches. Passivating contacts, which incorporate thin films within the contact structure that simultaneously supress recombination and promote charge-carrier selectivity, are a promising next step for the mainstream c-Si PV industry. In this work, we review the fundamental physical processes governing contact formation in c-Si. In doing so we identify the role passivating contacts play in increasing c-Si solar cell efficiencies beyond the limitations imposed by heavy doping and direct metallization. Strategies towards the implementation of passivating contacts in industrial environments are discussed.

Date: 2019
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DOI: 10.1038/s41560-019-0463-6

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