Identification of embedded nanotwins at c-Si/a-Si:H interface limiting the performance of high-efficiency silicon heterojunction solar cells

Xianlin Qu, Yongcai He, Minghao Qu, Tianyu Ruan, Feihong Chu, Zilong Zheng, Yabin Ma, Yuanping Chen, Xiaoning Ru, Xixiang Xu, Hui Yan, Lihua Wang, Yongzhe Zhang (), Xiaojing Hao, Ziv Hameiri, Zhi-Gang Chen, Lianzhou Wang and Kun Zheng ()
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Xianlin Qu: Beijing University of Technology
Yongcai He: Beijing University of Technology
Minghao Qu: Hanergy Chengdu Research and Development Center
Tianyu Ruan: Beijing University of Technology
Feihong Chu: Beijing University of Technology
Zilong Zheng: Beijing University of Technology
Yabin Ma: Jiangsu University
Yuanping Chen: Jiangsu University
Xiaoning Ru: Hanergy Chengdu Research and Development Center
Xixiang Xu: Hanergy Chengdu Research and Development Center
Hui Yan: Beijing University of Technology
Lihua Wang: Beijing University of Technology
Yongzhe Zhang: Beijing University of Technology
Xiaojing Hao: University of New South Wales
Ziv Hameiri: University of New South Wales
Zhi-Gang Chen: University of Southern Queensland
Lianzhou Wang: University of Queensland
Kun Zheng: Beijing University of Technology

Nature Energy, 2021, vol. 6, issue 2, 194-202

Abstract: Abstract The interface of high-quality crystalline silicon/hydrogenated amorphous silicon (c-Si/a-Si:H) is indispensable for achieving the ideal conversion efficiency of Si heterojunction solar cells. Therefore, it is extremely desirable to characterize and control the interface at the atomic scale. Here, we employ spherical aberration-corrected transmission electron microscopy to investigate the atomic structure of the c-Si/a-Si:H interface in high-efficiency Si heterojunction solar cells. Their structural evolution during in situ annealing is visualized at the atomic scale. High-density embedded nanotwins, detrimental to the device performance, are identified in the thin epitaxial layer between c-Si and a-Si:H. The nucleation and formation of these nanotwins are revealed via ex situ and in situ high-resolution transmission electron microscopy. Si heterojunction solar cells with low-density nanotwins are fabricated by introducing an ultra-thin intrinsic a-Si:H buffer layer and show better performance, indicating that the strategy to restrain embedded nanotwins can further enhance the conversion efficiency of Si heterojunction solar cells.

Date: 2021
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DOI: 10.1038/s41560-020-00768-4

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