Low-temperature and effective ex situ group V doping for efficient polycrystalline CdSeTe solar cells

Deng-Bing Li, Canglang Yao, S. N. Vijayaraghavan, Rasha A. Awni, Kamala K. Subedi, Randy J. Ellingson, Lin Li, Yanfa Yan () and Feng Yan ()
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Deng-Bing Li: University of Toledo
Canglang Yao: University of Toledo
S. N. Vijayaraghavan: The University of Alabama
Rasha A. Awni: University of Toledo
Kamala K. Subedi: University of Toledo
Randy J. Ellingson: University of Toledo
Lin Li: The University of Alabama
Yanfa Yan: University of Toledo
Feng Yan: The University of Alabama

Nature Energy, 2021, vol. 6, issue 7, 715-722

Abstract: Abstract CdTe solar cell technology is one of the lowest-cost methods of generating electricity in the solar industry, benefiting from fast CdTe absorber deposition, CdCl2 treatment and Cu doping. However, Cu doping has low photovoltage and issues with instability. Doping group V elements into CdTe is therefore a promising route to address these challenges. Although high-temperature in situ group V doped CdSeTe devices have demonstrated efficiencies exceeding 20%, they face obstacles including post-deposition doping activation processes, short carrier lifetimes and low activation ratios. Here, we demonstrate low-temperature and effective ex situ group V doping for CdSeTe solar cells using group V chlorides. For AsCl3 doped CdSeTe solar cells, the dopant activation ratio can be 5.88%, hole densities reach >2 × 1015 cm−3 and carrier lifetime is longer than 20 ns. Thus, ex situ As doped CdSeTe solar cells show open-circuit voltages ~863 mV, compared to the highest open-circuit voltage of 852 mV for Cu doped CdSeTe solar cells.

Date: 2021
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DOI: 10.1038/s41560-021-00848-z

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