Silicon heterojunction solar cells with up to 26.81% efficiency achieved by electrically optimized nanocrystalline-silicon hole contact layers

Hao Lin, Miao Yang, Xiaoning Ru, Genshun Wang, Shi Yin (), Fuguo Peng, Chengjian Hong, Minghao Qu, Junxiong Lu, Liang Fang, Can Han, Paul Procel, Olindo Isabella, Pingqi Gao (), Zhenguo Li and Xixiang Xu ()
Additional contact information
Hao Lin: LONGi Green Energy Technology Co., Ltd.
Miao Yang: LONGi Green Energy Technology Co., Ltd.
Xiaoning Ru: LONGi Green Energy Technology Co., Ltd.
Genshun Wang: LONGi Green Energy Technology Co., Ltd.
Shi Yin: LONGi Green Energy Technology Co., Ltd.
Fuguo Peng: LONGi Green Energy Technology Co., Ltd.
Chengjian Hong: LONGi Green Energy Technology Co., Ltd.
Minghao Qu: LONGi Green Energy Technology Co., Ltd.
Junxiong Lu: LONGi Green Energy Technology Co., Ltd.
Liang Fang: LONGi Green Energy Technology Co., Ltd.
Can Han: Sun Yat-sen University
Paul Procel: Delft University of Technology
Olindo Isabella: Delft University of Technology
Pingqi Gao: Sun Yat-sen University
Zhenguo Li: LONGi Green Energy Technology Co., Ltd.
Xixiang Xu: LONGi Green Energy Technology Co., Ltd.

Nature Energy, 2023, vol. 8, issue 8, 789-799

Abstract: Abstract Silicon heterojunction (SHJ) solar cells have reached high power conversion efficiency owing to their effective passivating contact structures. Improvements in the optoelectronic properties of these contacts can enable higher device efficiency, thus further consolidating the commercial potential of SHJ technology. Here we increase the efficiency of back junction SHJ solar cells with improved back contacts consisting of p-type doped nanocrystalline silicon and a transparent conductive oxide with a low sheet resistance. The electrical properties of the hole-selective contact are analysed and compared with a p-type doped amorphous silicon contact. We demonstrate improvement in the charge carrier transport and a low contact resistivity (

Date: 2023
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DOI: 10.1038/s41560-023-01255-2

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