Improved reverse bias stability in p–i–n perovskite solar cells with optimized hole transport materials and less reactive electrodes

Fangyuan Jiang, Yangwei Shi, Tanka R. Rana, Daniel Morales, Isaac E. Gould, Declan P. McCarthy, Joel A. Smith, M. Greyson Christoforo, Muammer Y. Yaman, Faiz Mandani, Tanguy Terlier, Hannah Contreras, Stephen Barlow, Aditya D. Mohite, Henry J. Snaith, Seth R. Marder, J. Devin MacKenzie, Michael D. McGehee and David S. Ginger ()
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Fangyuan Jiang: University of Washington
Yangwei Shi: University of Washington
Tanka R. Rana: University of Washington
Daniel Morales: University of Colorado Boulder
Isaac E. Gould: University of Colorado Boulder
Declan P. McCarthy: University of Colorado Boulder
Joel A. Smith: University of Oxford
M. Greyson Christoforo: University of Oxford
Muammer Y. Yaman: University of Washington
Faiz Mandani: Rice University
Tanguy Terlier: Rice University
Hannah Contreras: University of Washington
Stephen Barlow: University of Colorado Boulder
Aditya D. Mohite: Rice University
Henry J. Snaith: University of Oxford
Seth R. Marder: University of Colorado Boulder
J. Devin MacKenzie: University of Washington
Michael D. McGehee: University of Colorado Boulder
David S. Ginger: University of Washington

Nature Energy, 2024, vol. 9, issue 10, 1275-1284

Abstract: Abstract As perovskite photovoltaics stride towards commercialization, reverse bias degradation in shaded cells that must current match illuminated cells is a serious challenge. Previous research has emphasized the role of iodide and silver oxidation, and the role of hole tunnelling from the electron-transport layer into the perovskite to enable the flow of current under reverse bias in causing degradation. Here we show that device architecture engineering has a significant impact on the reverse bias behaviour of perovskite solar cells. By implementing both a ~35-nm-thick conjugated polymer hole transport layer and a more electrochemically stable back electrode, we demonstrate average breakdown voltages exceeding −15 V, comparable to those of silicon cells. Our strategy for increasing the breakdown voltage reduces the number of bypass diodes needed to protect a solar module that is partially shaded, which has been proven to be an effective strategy for silicon solar panels.

Date: 2024
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DOI: 10.1038/s41560-024-01600-z

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