Charge-carrier-concentration inhomogeneities in alkali-treated Cu(In,Ga)Se2 revealed by conductive atomic force microscopy tomography
Deepanjan Sharma,
Nicoleta Nicoara,
Philip Jackson,
Wolfram Witte,
Dimitrios Hariskos and
Sascha Sadewasser ()
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Deepanjan Sharma: INL–International Iberian Nanotechnology Laboratory
Nicoleta Nicoara: INL–International Iberian Nanotechnology Laboratory
Philip Jackson: Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW)
Wolfram Witte: Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW)
Dimitrios Hariskos: Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW)
Sascha Sadewasser: INL–International Iberian Nanotechnology Laboratory
Nature Energy, 2024, vol. 9, issue 2, 163-171
Abstract:
Abstract Photovoltaic power conversion using polycrystalline light-absorbing semiconductors enables low-cost electricity generation. Cu(In,Ga)Se2 (CIGS) are among the best performing thin-film solar cells with notable recent improvements upon an alkali-fluoride (AlkF) post-deposition treatment (PDT). Here we show that the success of this treatment can be hampered by spatial inhomogeneities in the conductivity. We apply an emerging conductive atomic force microscopy (C-AFM) tomography technique and obtain three-dimensional conductivity maps, enabling imaging of the carrier concentration grain by grain on the submicrometre scale. We find that a solar cell with KF PDT shows a stronger inhomogeneity of charge-carrier concentration, while RbF and CsF lead to narrow distributions at higher charge-carrier concentrations. The CIGS charge-carrier concentration and its homogeneity influence directly the open-circuit voltage of solar cells, thereby impacting device performance. Our insights support the development of higher efficiency thin-film photovoltaics through optimized AlkF PDTs. Moreover, the C-AFM tomography method is widely applicable to energy materials.
Date: 2024
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Persistent link: https://EconPapers.repec.org/RePEc:nat:natene:v:9:y:2024:i:2:d:10.1038_s41560-023-01420-7
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DOI: 10.1038/s41560-023-01420-7
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