Reduced recombination via tunable surface fields in perovskite thin films

Dane W. deQuilettes, Jason J. Yoo, Roberto Brenes, Felix Utama Kosasih, Madeleine Laitz, Benjia Dak Dou, Daniel J. Graham, Kevin Ho, Yangwei Shi, Seong Sik Shin (), Caterina Ducati, Moungi G. Bawendi () and Vladimir Bulović ()
Additional contact information
Dane W. deQuilettes: Massachusetts Institute of Technology
Jason J. Yoo: Massachusetts Institute of Technology
Roberto Brenes: Massachusetts Institute of Technology
Felix Utama Kosasih: University of Cambridge
Madeleine Laitz: Massachusetts Institute of Technology
Benjia Dak Dou: Massachusetts Institute of Technology
Daniel J. Graham: University of Washington
Kevin Ho: University of Washington
Yangwei Shi: University of Washington
Seong Sik Shin: Division of Advanced Materials, Korea Research Institute of Chemical Technology
Caterina Ducati: University of Cambridge
Moungi G. Bawendi: Massachusetts Institute of Technology
Vladimir Bulović: Massachusetts Institute of Technology

Nature Energy, 2024, vol. 9, issue 4, 457-466

Abstract: Abstract The ability to reduce energy loss at semiconductor surfaces through passivation or surface field engineering is an essential step in the manufacturing of efficient photovoltaic (PV) and optoelectronic devices. Similarly, surface modification of emerging halide perovskites with quasi-two-dimensional (2D) heterostructures is now ubiquitous to achieve PV power conversion efficiencies (PCEs) >25%, yet a fundamental understanding to how these treatments function is still generally lacking. Here we use a unique combination of depth-sensitive nanoscale characterization techniques to uncover a tunable passivation strategy and mechanism found in perovskite PV devices that were the first to reach the >25% PCE milestone. Namely, treatment with hexylammonium bromide leads to the simultaneous formation of an iodide-rich 2D layer along with a Br halide gradient that extends from defective surfaces and grain boundaries into the bulk three-dimensional (3D) layer. This interface can be optimized to extend the charge carrier lifetime to record values >30 μs and to reduce interfacial recombination velocities to values as low as

Date: 2024
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DOI: 10.1038/s41560-024-01470-5

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