Multiple causal pathways of high-quality development for semiconductor enterprises in China

Shichuan Li and Xinjie Yang

PLOS ONE, 2026, vol. 21, issue 1, 1-23

Abstract: As China’s economy undergoes transformation, enhancing the high-quality development of semiconductor enterprises has profound implications for overall economic growth. This study constructs a multi-factor configurational model influencing the high-quality development of semiconductor enterprises based on the Technology-Organization-Environment framework and conducts configurational analysis using the fuzzy-set qualitative comparative analysis method. The results indicate that high-quality development is a systematic process where no single factor is a necessary condition for the high-quality development of semiconductor enterprises. Five paths lead to high-quality development, which can be categorized into three types: innovation capability and enterprise size-dominated type, innovation capability and human capital level-driven type, and multi-factor linkage type. The study investigates the mechanisms of high-quality development from a structural perspective, providing insights into the synergistic effects of various factors and revealing the complex relationships underlying high-quality development.

Date: 2026
References: View references in EconPapers View complete reference list from CitEc
Citations:

Downloads: (external link)
https://journals.plos.org/plosone/article?id=10.1371/journal.pone.0340629 (text/html)
https://journals.plos.org/plosone/article/file?id= ... 40629&type=printable (application/pdf)

Related works:
This item may be available elsewhere in EconPapers: Search for items with the same title.

Export reference: BibTeX RIS (EndNote, ProCite, RefMan) HTML/Text

Persistent link: https://EconPapers.repec.org/RePEc:plo:pone00:0340629

DOI: 10.1371/journal.pone.0340629

Access Statistics for this article

More articles in PLOS ONE from Public Library of Science
Bibliographic data for series maintained by plosone ().