Mechanisms of CVD diamond nucleation and growth on mechanically scratched Si(100) surfaces

J. Arnault, L. Demuynck, C. Speisser and F. Normand ()

The European Physical Journal B: Condensed Matter and Complex Systems, 1999, vol. 11, issue 2, 327-343

Abstract: The diamond nucleation has been studied on scratched Si(100) both by surface analyses (XPS, AES, ELS) and microstructural probes (AFM, SEM). Two pathways for diamond formation and growth are detected: A seeding pathway occurs by direct growth from part of diamond seeds left by the mechanical pretreatment. Not all of these seeds however are prone to diamond growth as they can be either dissolved or carburized. A nucleation pathway occurs through a stepwise process including the formation of extrinsic (pretreatment) or intrinsic (in situ) nucleation sites, followed by formation of carbon-based precursors. It is believed that nucleation sites could be either grooves of scratching lines or protrusions produced by etching-redeposition. The size of these protrusions is not larger than 100 nm. On top of these protrusions as well as on the bare substrate, a thin layer of silicon carbide rapidly forms and DLC carbon likely. This complex process on top of protrusions may constitute carbon-based embryos for further diamond nucleation. Copyright Società Italiana di Fisica, Springer-Verlag 1999

Keywords: PACS. 81.05.Tp Fullerenes and related materials; diamonds, graphite, 81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.), 82.65.-i Surface and interface chemistry, (search for similar items in EconPapers)
Date: 1999
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DOI: 10.1007/s100510050943

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