Two-dimensional electron systems in inversion layers of p-type Hg 0.8 Zn 0.2 Te metal-insulator-semiconductor structures

O. Rousière, D. Lemoine (), H. Folliot, S. Hinooda and R. Granger

The European Physical Journal B: Condensed Matter and Complex Systems, 1999, vol. 11, issue 3, 491-496

Abstract: Strong oscillations on capacitance and conductance have been observed in p-type Hg 0.8 Zn 0.2 Te metal-insulator-semiconductor structures, made by using a recent process for the interface passivation. This behaviour is attributed to a two-dimensional electron gas in the n-inversion layer and the variation of the conductance maximums with temperature indicates that the dominant perpendicular transport mechanism for electrons is an incoherent two-step tunnelling through deep levels in the gap. Three models have been used to describe the quantum confinement: the simple variational method, the triangular potential approximation and the propagation matrix method. The later approach takes into account the non parabolicity of the conduction band structure and uses a finite height barrier at the insulator-semiconductor interface. A very good agreement between experimental and calculated values for the two lowest subband energy is obtained. Copyright Società Italiana di Fisica, Springer-Verlag 1999

Keywords: PACS. 73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator); 81.40.Rs Electrical and magnetic properties (related to treatment conditions); 73.20.Dx Electron states in low-dimensional structures (superlattices; quantum well structures and multilayers) (search for similar items in EconPapers)
Date: 1999
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DOI: 10.1007/BF03219178

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