The finite-temperature photoluminescence correlation function in semiconductor heterostructures

M. Tavares (), G. Marques and C. Tejedor

The European Physical Journal B: Condensed Matter and Complex Systems, 1999, vol. 11, issue 4, 655-663

Abstract: We report the inclusion of temperature effects on the Mahan-Nozières-De Dominicis framework to study both many-body and temperature effects in photoluminescence spectra of doped semiconductors. The electronic part of the correlation function characterizes the photoluminescence spectra. We have treated the optical valence hole as a localized scattering potential center and studied effects of the electron-hole interaction enhancement on the photoluminescence spectra leading to the appearance of shake-up structures. We also have identified a term in the correlation function which represents the finite-temperature contribution to the intensities of the shake-up structures. The method is used to study the magnetophotoluminescence of modulation-doped quantum wells with a weak periodic lateral potential. Copyright Società Italiana di Fisica, Springer-Verlag 1999

Keywords: PACS. 71.10-w Theories and models of many electron systems; 78.66-w Optical properties of specific thin films; surfaces; and low dimensional structures (search for similar items in EconPapers)
Date: 1999
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DOI: 10.1007/s100510051194

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