High quality CVD diamond: a Raman scattering and photoluminescence study

M.G. Donato, G. Faggio, M. Marinelli, G. Messina, E. Milani, A. Paoletti, S. Santangelo, A. Tucciarone and G. Verona Rinati
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M.G. Donato: INFM, Dipartimento di Meccanica e Materiali, Facoltà di Ingegneria dell'Università, Località Feo di Vito, 89060 Reggio Calabria, Italy
G. Faggio: INFM, Dipartimento di Meccanica e Materiali, Facoltà di Ingegneria dell'Università, Località Feo di Vito, 89060 Reggio Calabria, Italy
M. Marinelli: INFM, Dipartimento di Scienze e Tecnologie Fisiche ed Energetiche, Università di Roma Tor Vergata, via di Tor Vergata, 00133 Roma, Italy
G. Messina: INFM, Dipartimento di Meccanica e Materiali, Facoltà di Ingegneria dell'Università, Località Feo di Vito, 89060 Reggio Calabria, Italy
E. Milani: INFM, Dipartimento di Scienze e Tecnologie Fisiche ed Energetiche, Università di Roma Tor Vergata, via di Tor Vergata, 00133 Roma, Italy
A. Paoletti: INFM, Dipartimento di Scienze e Tecnologie Fisiche ed Energetiche, Università di Roma Tor Vergata, via di Tor Vergata, 00133 Roma, Italy
S. Santangelo: INFM, Dipartimento di Meccanica e Materiali, Facoltà di Ingegneria dell'Università, Località Feo di Vito, 89060 Reggio Calabria, Italy
A. Tucciarone: INFM, Dipartimento di Scienze e Tecnologie Fisiche ed Energetiche, Università di Roma Tor Vergata, via di Tor Vergata, 00133 Roma, Italy
G. Verona Rinati: INFM, Dipartimento di Scienze e Tecnologie Fisiche ed Energetiche, Università di Roma Tor Vergata, via di Tor Vergata, 00133 Roma, Italy

The European Physical Journal B: Condensed Matter and Complex Systems, 2001, vol. 20, issue 1, 133-139

Abstract: Abstract: High quality synthetic diamonds were grown on single-crystal silicon by microwave plasma enhanced chemical vapour deposition (CVD). A careful optimisation of both the experimental setup and the growth parameters was necessary before that the achievement of the best results was made possible. The films were deposited using a CH4-H2 gas mixture at methane concentrations variable in the range 0.6-2.2%, while the substrate temperature was fixed at 750 °C. Raman spectroscopy and photoluminescence (PL) were utilised to monitor the quality of the deposited films and to study the spatial distribution of defects, respectively. Micro-Raman analysis shows that linewidths of the diamond peak lower than 2.4 cm-1 can be easily measured at the growth surface, indicating that the crystalline quality of individual grains is comparable to that of the best natural diamonds. The excellent phase purity of the diamond microcrystals at the growth surface is witnessed by the complete absence of any non-diamond carbon feature and by a very weak luminescence background in the 1.6-2.4 eV spectral range. A worsening of the quality of the diamond particles is found moving from the growth surface towards the film-substrate interface. A photoluminescence feature at about 1.68 eV, commonly associated to Si impurities, is distinctly observed as the exciting laser beam is focused close to the interface. A progressive degradation of the global quality of the films is found with increasing methane concentration in the gas mixture, as witnessed by an increased PL background in the films grown at higher methane concentrations.

Keywords: PACS. 81.05.Uw Carbon; diamond; graphite – 78.30.Am Elemental semiconductors and insulators – 78.55.Ap Elemental semiconductors (search for similar items in EconPapers)
Date: 2001
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DOI: 10.1007/s100510170291

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