High resolution photoemission spectroscopy study near the Fermi edge for different surfaces prepared on the icosahedral AlPdMn phase
T. Schaub,
J. Delahaye,
C. Berger,
H. Guyot,
R. Belkhou,
A. Taleb-Ibrahimi and
Y. Calvayrac
Additional contact information
T. Schaub: Laboratoire d'Études des Propriétés Électroniques des Solides - CNRS, BP 166, 38042 Grenoble Cedex 9, France
J. Delahaye: Laboratoire d'Études des Propriétés Électroniques des Solides - CNRS, BP 166, 38042 Grenoble Cedex 9, France
C. Berger: Laboratoire d'Études des Propriétés Électroniques des Solides - CNRS, BP 166, 38042 Grenoble Cedex 9, France
H. Guyot: Laboratoire d'Études des Propriétés Électroniques des Solides - CNRS, BP 166, 38042 Grenoble Cedex 9, France
R. Belkhou: Laboratoire pour l'Utilisation du Rayonnement Électromagnétique, Université Paris Sud, 91405 Orsay Cedex, France
A. Taleb-Ibrahimi: Laboratoire pour l'Utilisation du Rayonnement Électromagnétique, Université Paris Sud, 91405 Orsay Cedex, France
Y. Calvayrac: Centre d'Études de Chimie Métallurgique - CNRS, 15 rue Georges Urbain, 94407 Vitry, France
The European Physical Journal B: Condensed Matter and Complex Systems, 2001, vol. 20, issue 2, 183-188
Abstract:
Abstract: High resolution photoemission measurements performed at low temperatures on a single-grained sample of the AlPdMn icosahedral phase show that the density of states N(E) strongly depends on the nature of the surface. For an ordered quasicrystalline surface, prepared by Ar etching and ultra high vacuum annealing, a dip feature is observed in N(E) near the Fermi level, which energy dependence can be analyzed with a simple square-root power law. By contrast, N(E) varies only little with energy both for a disordered surface and a crystalline surface of the same sample. A sharp Fermi edge is then clearly observed. This shows that the metallic character of the surface of a quasicrystal is strongly reduced when the surface presents a quasicrystalline ordering.
Keywords: PACS. 71.23.Ft Quasicrystals – 79.60.Bm Clean metal, semiconductor, and insulator surfaces – 71.55.Jv Disordered structures; amorphous and glassy solids (search for similar items in EconPapers)
Date: 2001
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DOI: 10.1007/s100510170268
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