On the dechanneling of protons in Si [110]

M. Kokkoris (), G. Perdikakis, S. Kossionides, S. Petrovic () and E. Simoen

The European Physical Journal B: Condensed Matter and Complex Systems, 2003, vol. 34, issue 3, 257-263

Abstract: In the present work, the dechanneling of protons in Si [110] is studied combining theoretical Monte-Carlo and phenomenological simulation results in the energy range E p =1.8-2.4 MeV. The applicability of a Gompertz type sigmoidal dechanneling function, with two parameters, k and x c , which represent characteristic dechanneling rate and range, respectively, is examined, yielding the successful reproduction of backscattering spectra of channeled protons along the Si [110] crystal axis. The results are compared to the ones obtained in the past for different beam - crystal orientation combinations and an attempt is made to explain the occurring similarities and discrepancies. Copyright Springer-Verlag Berlin/Heidelberg 2003

Date: 2003
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DOI: 10.1140/epjb/e2003-00219-y

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