Temperature stable low loss ceramic dielectrics in (1-x)ZnAl $\mathsf{_{2}}$ O $\mathsf{_{4}}$ -xTiO $\mathsf{_{2}}$ system for microwave substrate applications

K. Surendran, N. Santha, P. Mohanan and M. Sebastian ()

The European Physical Journal B: Condensed Matter and Complex Systems, 2004, vol. 41, issue 3, 301-306

Abstract: The microwave dielectric properties of ZnAl 2 O 4 spinels were investigated and their properties were tailored by adding different mole fractions of TiO 2 . The samples were synthesized using the mixed oxide route. The phase purity and crystal structure were identified using X-ray diffraction technique. The sintered specimens were characterized in the microwave frequency range (3-13 GHz). The ZnAl 2 O 4 ceramics exhibited interesting dielectric properties (dielectric constant ( $\varepsilon_{r})=8.5$ , unloaded quality factor (Q u )=4590 at 12.27 GHz and temperature coefficient of resonant frequency ( $\tau_{f})=-79$ ppm/ $^{\circ}$ C). Addition of TiO 2 into the spinel improved its properties and the $\tau_{f}$ approached zero for 0.83ZnAl 2 O 4 -0.17TiO 2 . This temperature compensated composition has excellent microwave dielectric properties ( $\varepsilon _{r}=12.67$ , Q u =9950 at 10.075 GHz) which can be exploited for microwave substrate applications. Copyright Springer-Verlag Berlin/Heidelberg 2004

Date: 2004
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DOI: 10.1140/epjb/e2004-00321-8

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