An analytical study of substrate current in submicron MOS devices

G. Vaidyanaath G. () and A. Singh

The European Physical Journal B: Condensed Matter and Complex Systems, 2004, vol. 42, issue 1, 113-117

Abstract: In the present communication we have tried to study the substrate current behavior in the sub-micron devices after solving the second order differential equation using appropriate boundary conditions. Simple and accurate models for maximum lateral field, drain saturation voltage and for ionization length have been developed. The simulation result of ionization length shows a good match with the known result. Analysis also shows that dominant contributor to the error in the ionization length is not only because of the excess saturated voltage but also due to the channel length and the gate to source voltage. For sub-micron devices the saturation region shifts towards the source for higher drain voltage and larger gate oxide thickness. Copyright Springer-Verlag Berlin/Heidelberg 2004

Date: 2004
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DOI: 10.1140/epjb/e2004-00362-y

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