Spectroscopic ellipsometric evidence of the solid-state reactions in Ni/Si multilayered films, induced by ion-beam mixing and thermal annealing

Y. P. Lee (), Y. V. Kudryavtsev, Y. N. Makogon, E. P. Pavlova and J. Y. Rhee

The European Physical Journal B: Condensed Matter and Complex Systems, 2005, vol. 44, issue 4, 431-438

Abstract: Solid-state reactions, induced by ion-beam mixing (IBM) and thermal annealing, in Ni/Si multilayered films (MLF) with an overall stoichiometry of Ni2Si, NiSi and NiSi2, while keeping the nominal thickness of Ni sublayer constant (3.0 nm), were studied by using spectroscopic ellipsometry as well as X-ray diffraction (XRD). The mixing was performed with Ar+ ions of an energy of 80 keV and a dose of 1.5× 1016 Ar+/cm2. Unlike the results of our previous study on Fe/Si MLF [Y.V. Kudryavtsev et al., Phys. Rev. B 65, 104417 (2002)], it was shown that an amorphous phase of NiSi in the B20 phase was formed during deposition independent of the overall stoichiometry of MLF, i.e., the nominal thickness of Si sublayer. IBM leads to some structural changes in the Ni/Si MLF, which cannot be detected by XRD but are confidently recognized by optical tools. A thermal annealing at 673 K of the Ni/Si MLF with an overall stoichiometry of NiSi and NiSi2 causes formation of the η-NiSi phase. The first trace of NiSi2 phase on the background of the η-NiSi phase was detected by XRD after an annealing at 1073 K, while, according to the optical results, NiSi2 turned out to be the dominant phase for the annealed Ni/Si MLF with an overall stoichiometry of NiSi2. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2005

Date: 2005
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DOI: 10.1140/epjb/e2005-00142-3

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