Self-localization of holes in a lightly doped Mott insulator

S.-P. Kou () and Z.-Y. Weng

The European Physical Journal B: Condensed Matter and Complex Systems, 2005, vol. 47, issue 1, 37-46

Abstract: We show that lightly doped holes will be self-trapped in an antiferromagnetic spin background at low-temperature, resulting in spontaneous translational symmetry breaking. The underlying Mott physics is responsible for such novel self-localization of charge carriers. Interesting transport and dielectric properties are found as the consequences, including large doping-dependent thermopower and dielectric constant, low-temperature variable-range-hopping resistivity, as well as high-temperature strange-metal-like resistivity, which are consistent with experimental measurements in the high-T c cuprates. Disorder and impurities only play a minor and assistant role here. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2005

Date: 2005
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DOI: 10.1140/epjb/e2005-00300-7

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