Multiple-frequency current oscillations in GaAs-AlGaAs quantum wells containing a thin semi-insulating layer

Z. H. Dai () and J. Ni

The European Physical Journal B: Condensed Matter and Complex Systems, 2005, vol. 47, issue 3, 443-447

Abstract: We have investigated non-equilibrium electron transport properties of a quantum well with an inserted thin semi-insulating potential barrier layer in nonlinear bias using a time-dependent simulation technique. We find that the charge redistribution with time in the whole structure has an important effect on the final current-voltage (I-V) curves. The results show that there are two evident current hysteresis phenomena in the negative differential conductance regions and the inserted semi-insulating potential barrier layer induces the formation of multiple emitter quantum wells, which leads to high-frequency terahertz current oscillations with multiple-frequency relations around the valley of current. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2005

Date: 2005
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DOI: 10.1140/epjb/e2005-00345-6

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