Universal estimation of X - trion binding energy in semiconductor quantum wells

R. A. Sergeev (), R. A. Suris, G. V. Astakhov, W. Ossau and D. R. Yakovlev

The European Physical Journal B: Condensed Matter and Complex Systems, 2005, vol. 47, issue 4, 541-547

Abstract: We have analyzed the binding energy (E B T ) of negatively charged excitons (X - ) in GaAs, CdTe and ZnSe quantum wells, which differ considerably in exciton and trion binding energy. Surprisingly, the E B T in these materials plotted against quantum well width in Bohr units is found to group around one universal curve described by a simple phenomenological equation. An illustrative model is suggested to calculate the binding energy E B T in a general case, and the results of calculations are in agreement with experimental data. The E B T dependencies on the mass ratio and the barriers height are also obtained from the general model and compared with other calculations available. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2005

Date: 2005
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DOI: 10.1140/epjb/e2005-00362-5

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