Structural characteristics of ultra-low k SiO 2 thin films prepared using a molecular template
Z.-W. He,
W.-X. Sun,
X.-Q. Liu,
D.-Y. Xu,
J. Gou and
Y.-Y. Wang ()
The European Physical Journal B: Condensed Matter and Complex Systems, 2005, vol. 48, issue 4, 463-468
Abstract:
Nanoporous SiO 2 thin films with ultra-low dielectric constants were synthesized using a molecular template method. Uniform films with pore size between 10 and 20 nm were obtained as observed by N 2 adsorption/desorption isotherms and transmission electron microscopy. Fourier transform infrared spectroscopy (FTIR) and differential thermal analysis were carried out to investigate the effect of n-hexane washing on structural properties before and after the surface modification process. The results showed that –OH bonds were substituted with –CH 3 bonds in the films as a result of modification of trimethylchlorosilane (TMCS)/n-hexane solution. Four kinds of model were used to analyze the relationship between porosity and dielectric constant of the films, where the dielectric constant was determined from capacitance-voltage measurements. The investigation indicated that the corresponding relationship was in accord with that estimated by the Rayleigh model. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2005
Date: 2005
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Persistent link: https://EconPapers.repec.org/RePEc:spr:eurphb:v:48:y:2005:i:4:p:463-468
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DOI: 10.1140/epjb/e2006-00002-8
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