Structural characteristics of ultra-low k SiO 2 thin films prepared using a molecular template

Z.-W. He, W.-X. Sun, X.-Q. Liu, D.-Y. Xu, J. Gou and Y.-Y. Wang ()

The European Physical Journal B: Condensed Matter and Complex Systems, 2005, vol. 48, issue 4, 463-468

Abstract: Nanoporous SiO 2 thin films with ultra-low dielectric constants were synthesized using a molecular template method. Uniform films with pore size between 10 and 20 nm were obtained as observed by N 2 adsorption/desorption isotherms and transmission electron microscopy. Fourier transform infrared spectroscopy (FTIR) and differential thermal analysis were carried out to investigate the effect of n-hexane washing on structural properties before and after the surface modification process. The results showed that –OH bonds were substituted with –CH 3 bonds in the films as a result of modification of trimethylchlorosilane (TMCS)/n-hexane solution. Four kinds of model were used to analyze the relationship between porosity and dielectric constant of the films, where the dielectric constant was determined from capacitance-voltage measurements. The investigation indicated that the corresponding relationship was in accord with that estimated by the Rayleigh model. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2005

Date: 2005
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DOI: 10.1140/epjb/e2006-00002-8

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