Quantum kinetic theory of phonon-assisted carrier transitions in nitride-based quantum-dot systems

J. Seebeck (), T. R. Nielsen, P. Gartner and F. Jahnke

The European Physical Journal B: Condensed Matter and Complex Systems, 2006, vol. 49, issue 2, 167-170

Abstract: A microscopic theory for the interaction of carriers with LO phonons is used to study the ultrafast carrier dynamics in nitride-based semiconductor quantum dots. It is shown that the efficiency of scattering processes is directly linked to quasi-particle renormalizations. The electronic states of the interacting system are strongly modified by the combined influence of quantum confinement and polar coupling. Inherent electrostatic fields, typical for InGaN/GaN quantum dots, do not limit the fast scattering channels. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2006

Date: 2006
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DOI: 10.1140/epjb/e2006-00048-6

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