Effects of the Si-nanocluster size on the sensitizing role towards Er ions

F. Gourbilleau (), R. Rizk, C. Dufour and R. Madelon

The European Physical Journal B: Condensed Matter and Complex Systems, 2006, vol. 51, issue 3, 341-344

Abstract: The effects of Si nanocluster (Si-nc) size on the energy transfer rate to Er ions were investigated through studies made on appropriate configurations of mutilayers (MLs) consisting in about 20 periods of Er-doped Si-rich SiO 2 /SiO 2 . These MLs were deposited by reactive magnetron sputtering at 650 °C and subsequently annealed at 900 °C. For Si-rich layer thickness or Si-nc larger than about 4 nm, the sensitizing effect of Si-nc towards rare earth ions is highly lowered because of the weak confinement of carriers and the loss of resonant excitation of Er through the upper levels (second, third, ...). The latter is liable to prevent the energy back transfer process, while the weak confinement reduces strongly the probability of no phonon radiative recombination necessary for the energy transfer from Si-nc to Er ions. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2006

Keywords: 78.55.-m Photoluminescence, properties and materials, 78.67.Pt Multilayers; superlattices, 81.15.Cd Deposition by sputtering , (search for similar items in EconPapers)
Date: 2006
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DOI: 10.1140/epjb/e2006-00233-7

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