Bias voltage and temperature dependence of magneto-electric properties in double-barrier magnetic tunnel junction with amorphous Co-Fe-B electrodes

Z. M. Zeng (), Y. Wang, X. F. Han, W. S. Zhan and Z. Zhang

The European Physical Journal B: Condensed Matter and Complex Systems, 2006, vol. 52, issue 2, 205-208

Abstract: Bias voltage and temperature dependence of magneto-electric properties in double-barrier magnetic tunnel junctions(DBMTJs) with a structure of [IrMn/CoFe/Ru/CoFeB]/Al-O/CoFeB/Al-O/[CoFeB/Ru/CoFe/IrMn], have been investigated. The DBMTJs show a large tunnel magnetoresistance (TMR) ratio of up to 57.6%, a high V 1/2 value of 1.26 V and small switching field H c of 9.5 Oe at room temperature (RT). The TMR reaches the maximum at 30 K, about 89.0%, and decreases slightly from 30 to 4.2 K. A novel zero-bias anomaly (ZBA) in the P state is found and is temperature dependent, more sharply at low temperature, whereas a normal ZBA exists in the AP state. These effects are ascribed to magnon-, phonon- and impurity-assisted tunneling, and variation of density of states. The DBMTJ with a large TMR ratio, a high V 1/2 , and small switching field H c is promising for developing the future spin electronic devices. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2006

Keywords: 73.43.Qt Magnetoresistance, 75.47.-m Magnetotransport phenomena; materials for magnetotransport, 85.75.-d Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields, (search for similar items in EconPapers)
Date: 2006
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DOI: 10.1140/epjb/e2006-00291-9

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