Tunneling magnetoresistance in small dot arrays with perpendicular anisotropy

L. F. Zhang, C. Xu (), P. M. Hui and Y. Q. Ma

The European Physical Journal B: Condensed Matter and Complex Systems, 2006, vol. 52, issue 3, 305-309

Abstract: The tunneling magnetoresistance (TMR) of a small magnetic dot array with perpendicular anisotropy, is studied by using a resistor network model. Because of the competition between dipolar interaction and perpendicular anisotropy, the TMR ratio can be up to a maximum value (~26%) as predicted by a theoretical model. At moderate dipolar interaction strength, the perpendicular TMR ratio exhibits abrupt jumps due to the switching of magnetic moments in the array when the applied field (normal to the array plane) decreases from a saturation field. This novel character does not occur if the dipolar interaction between particles is quite strong. Furthermore, the effect of the array size N on TMR is also studied and the result shows that TMR ratio fluctuates when N increases for a moderate dipolar interaction strength. When the applied field h e is parallel to the array plane, the in-plane TMR curve seems insensitive to the dipolar interaction strength, but the maximum TMR ratio (~26%) can also be obtained at h e =0. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2006

Keywords: 75.47.-m Magnetotransport phenomena; materials for magnetotransport, 75.60.Jk Magnetization reversal mechanisms, 75.50.Tt Fine-particle systems; nanocrystalline materials, (search for similar items in EconPapers)
Date: 2006
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DOI: 10.1140/epjb/e2006-00299-1

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