Effects of a cap layer on built-in electric fields of Al x Ga 1-x N/GaN heterostructures non-destructively probed by Franz-Keldysh oscillations

H. Takeuchi (), Y. Yamamoto, Y. Kamo, T. Oku and M. Nakayama

The European Physical Journal B: Condensed Matter and Complex Systems, 2006, vol. 52, issue 3, 311-314

Abstract: We have investigated electric field strengths in the Al x Ga 1-x N layer, F AlGaN 's, of Al x Ga 1-x N/GaN heterostructures with and without a GaN cap layer using photoreflectance (PR) spectroscopy. Franz-Keldysh oscillations (FKOs) from the Al x Ga 1-x N layer are clearly observed in the PR spectra. It is found from analysis of the FKOs that stacking of the cap layer causes a remarkable enhancement of F AlGaN . This fact demonstrates that the FKO profile is a non-destructive probe for a change of built-in electric field strength induced by a cap layer. Numerical calculations of F AlGaN based on a Schrödinger-Poisson equation clarify that the magnitude of the enhancement of F AlGaN is dominated by the cap-layer thickness. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2006

Keywords: 78.40.Fy Semiconductors, 78.67.Pt Multilayers; superlattices, 77.65.-j Piezoelectricity and electromechanical effects, (search for similar items in EconPapers)
Date: 2006
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DOI: 10.1140/epjb/e2006-00302-y

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