Spin-polarized transport through a time-periodic non-magnetic semiconductor heterostructure

K. Gnanasekar () and K. Navaneethakrishnan ()

The European Physical Journal B: Condensed Matter and Complex Systems, 2006, vol. 53, issue 4, 455-461

Abstract: Spin-dependent Floquet scattering theory is developed to investigate the photon-assisted spin-polarized electron transport through a semiconductor heterostructure in the presence of an external electric field. Spin-dependent Fano resonances and spin-polarized electron transport through a laser irradiated time-periodic non-magnetic heterostructure in the presence of Dresselhaus spin-orbit interaction and a gate-controlled Rashba spin-orbit interaction are investigated. The electric field due to laser along with the spin-orbit interactions help to get spin-dependent Fano resonances in the conductance, whereas the external bias can be appropriately adjusted to get a near 80% spin-polarized electron transmission through heterostructures. The resultant nature of the Floquet scattering depends on the relative strength of these two electric fields. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2006

Keywords: 85.75.Mm Spin polarized resonant tunnel junctions; 72.20.-i Conductivity phenomena in semiconductors and insulators; 73.40.Gk Tunneling; 73.63.Hs Quantum wells (search for similar items in EconPapers)
Date: 2006
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DOI: 10.1140/epjb/e2006-00404-6

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