Enhanced light emission in Si-nanoclusters arrays

K. I. Mazzitello, H. O. Mártin and H. E. Roman ()

The European Physical Journal B: Condensed Matter and Complex Systems, 2006, vol. 54, issue 3, 315-320

Abstract: An array of silicon nanoclusters aimed at producing light emission upon injection of electrons and holes from external sources is studied by Monte Carlo simulations. The conditions for obtaining a significant charge accumulation in the emitting nanoclusters are investigated as a function of array geometry and applied electric fields. It is found that if a stationary state, reached for an applied field F 0 , is suddenly perturbed by a field F 1 ≫F 0 , a significant increase in electron-hole pairs population can be obtained with respect to the case of a single field of constant intensity F 1 , leading to enhanced light emission when the conductivity of the array is above 6×10 -10 [ Ω cm] -1 . The excess population thus created gets fully recombined on the time scale of milliseconds, suggesting a device that can produce enhanced light emission in the range of kilohertz. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2006

Keywords: 85.60.Jb Light-emitting devices; 05.10.Ln Monte Carlo methods; 73.63.-b Electronic transport in nanoscale materials and structures (search for similar items in EconPapers)
Date: 2006
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DOI: 10.1140/epjb/e2007-00008-8

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