Photogalvanic current in artificial asymmetric nanostructures

A. D. Chepelianskii, M. V. Entin, L. I. Magarill and D. L. Shepelyansky

The European Physical Journal B: Condensed Matter and Complex Systems, 2007, vol. 56, issue 4, 323-333

Abstract: We develop a theoretic description of the photogalvanic current induced by a high frequency radiation in asymmetric nanostructures and show that it describes well the results of numerical simulations. Our studies allow to understand the origin of the electronic ratchet transport in such systems and show that they can be used for creation of new types of detectors operating at room temperature in a terahertz radiation range. Copyright EDP Sciences/Società Italiana di Fisica/Springer-Verlag 2007

Keywords: 72.40.+w Photoconduction and photovoltaic effects; 73.63.-b Electronic transport in nanoscale materials and structures; 05.45.Ac Low-dimensional chaos (search for similar items in EconPapers)
Date: 2007
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DOI: 10.1140/epjb/e2007-00127-2

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